INTRODUCTION High electron mobility transistors (HEMTs) technology is usually used for high frequency, high speed and low power applications due to the enhanced electron mobility and velocity at high electron density in the channel. These promising results allow us to affirm that this device is intended to be used in high frequency applications. The cutoff frequency and maximum frequency of oscillation are 980 GHz and 1.3THz respectively. The SILVACO-TCAD simulations performed at room temperature using the appropriate model sshowed that the studied device exhibit excellent pinch-off characteristics, with a maximum transconductance of 1100ms/mm, a threshold voltage of 0,62V, and an Ion/Ioff ratio of 2.106. LnAlAs/lnGaAs/InP high electron mobility transistor (HEMT) offers excellent high frequency operation.In this work, the DC and RF performance of a 20 nm gate length enhancement mode InAlAs/InGaAs/InP high electron mobility transistor (HEMT) on InP substrate are presented.
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